Jet impingement cooling for high power semiconductor devices

ABSTRACT

A jet impingement cooling assembly for semiconductor devices includes a heat exchange base having an inlet chamber and an outlet chamber. An inlet connection may be in fluid connection with the inlet chamber, while an outlet connection may be in fluid connection with the outlet chamber. A jet plate may be coupled to the inlet chamber, and a jet pedestal may be formed on the jet plate and having a raised surface with a jet nozzle formed therein.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional PatentApplication No. 62/913,563, filed on Oct. 10, 2019, the entire contentsof which is incorporated herein by reference.

TECHNICAL FIELD

This description relates to cooling techniques for semiconductordevices.

BACKGROUND

High power semiconductor devices, during operation, generate heat thatmay be harmful to the devices themselves, or to nearby components. Forexample, excess heat may cause an abrupt device breakdown, or maycontribute to shortening of a device lifetime.

To mitigate such potential difficulties, liquid cooling systems may beused to cool high power semiconductor devices. For example, a pump maybe used to direct a flow of water or other suitable cooling liquid tohigh-heat areas, to thereby facilitate heat transfer from the high-heatareas to the cooling liquid.

SUMMARY

According to one general aspect, a jet impingement cooling assembly forsemiconductor devices includes a heat exchange base having an inletchamber and an outlet chamber. An inlet connection may be in fluidconnection with the inlet chamber, while an outlet connection may be influid connection with the outlet chamber. A jet plate may be coupled tothe inlet chamber, and a jet pedestal may be formed on the jet plate andhaving a raised surface with a jet nozzle formed therein.

According to another general aspect, a jet plate assembly for jetimpingement cooling of a semiconductor device may include a jet plateconfigured to be received within a heat exchange base, and a jetpedestal formed on the jet plate and having at least one jet nozzleformed within a raised surface that is raised from the jet plate surfaceby at least one jet pedestal wall connecting the jet plate to the raisedsurface. The jet plate, when received within the heat exchange base, maydefine a fluid flow path from an inlet chamber of the heat exchange basethrough the jet nozzle, and through a return path defined by the atleast one jet pedestal wall to an outlet chamber of the heat exchangebase.

According to another general aspect, a method of making a jetimpingement cooling assembly for semiconductor devices may includeforming a heat exchange base having an inlet chamber and an outletchamber, forming an inlet connection in fluid connection with the inletchamber, and forming an outlet connection in fluid connection with theoutlet chamber. The method may include forming a jet plate configured tobe coupled to the inlet chamber, and forming a jet pedestal on the jetplate and having a raised surface with a jet nozzle formed therein.

The details of one or more implementations are set forth in theaccompanying drawings and the description below. Other features will beapparent from the description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an example exploded view of a jet impingement cooling assemblyfor high power semiconductor devices with the electronic module liftedaway from the heat exchanger.

FIG. 2 is a cross-section view of the jet impingement cooling assemblyof FIG. 1 .

FIG. 3 is a further view of the heat exchanger base of the jetimpingement cooling assembly of FIG. 1 .

FIG. 4A illustrates an example jet plate that may be used in conjunctionwith the example implementations of FIGS. 1-3 .

FIG. 4B illustrates an example of interchangeable jet pedestals that maybe used with the example jet plate of FIG. 4A.

FIG. 5 is an example of a heat exchanger base showing an alternativefluid exit direction.

FIG. 6 illustrates an example jet plate, showing flexibility in jetnozzle number and location, that may be used in conjunction with theexample of FIG. 5 .

FIG. 7 is an assembled view of the example jet impingement coolingassembly of FIG. 5 , with the example jet plate of FIG. 6 installedtherein.

FIG. 8 illustrates another example jet plate, used to cool threeelectronic packages.

FIG. 9A illustrates another example embodiment of the jet impingementcooling assembly of FIG. 1 , using the example jet plate of FIG. 8 .

FIG. 9B is another example view of the example of FIG. 9A.

FIG. 9C is an example cross-section view of the example of FIGS. 9A and9B.

FIG. 10 is a flowchart illustrating an example manufacturing process formaking a jet impingement cooling assembly, in accordance with exampleembodiments described herein.

FIG. 11 illustrates a graph demonstrating improved cooling provided bythe various embodiments described herein, as compared to conventionaltechniques.

DETAILED DESCRIPTION

As described in detail below, embodiments include a heat exchangeassembly for performing jet impingement cooling of semiconductor powermodules. In example implementations, high-speed, high-pressureapplication of a cooling liquid may be directed with high accuracyand/or precision to identified hotspots of semiconductor power modules.

The described jet impingement heat exchange (cooling) assemblyembodiments provide uniform pressure at each of a potential plurality ofjet nozzles or vents, to thereby provide uniform cooling to acorresponding plurality of hotspots. The jet impingement coolingassembly is efficient, in that jet impingement occurs at least at (e.g.,only at) the desired and necessary hotspots. The jet impingement coolingassembly embodiments provide direct contact of a cooling fluid to abackside of a substrate (e.g., direct bonded copper (DBC) substrate(e.g., a substrate including a dielectric disposed between a pair ofmetal layers for traces and/or bonding)) being cooled.

Described embodiments provide jet nozzles or vents close to a substratesurface being cooled, which defines a relatively narrow gap between ajet nozzle and the substrate. As a result, high-speed, high-pressureflow of the cooling liquid onto a desired hotspot occurs. Relativelylarge gaps adjacent to the jet nozzles may be provided for relativelylow-speed, low-pressure flow, which may be used for semiconductor chipsor other devices having a lower heat profile (e.g., diodes), and/or forefficient fluid return of the cooling fluid to a fluid pump.

Semiconductor power modules may include multiple semiconductor die(e.g., chips) or other devices, some of which may generate higher heatduring operation than others. Even for semiconductor power moduleshaving the same or similar semiconductor chips included therein,individual semiconductor chips may be placed (e.g., coupled) atdifferent positions within or on the module.

Accordingly, the described jet impingement cooling assembly embodimentsdescribed herein are highly configurable, and may be configured to alignjet impingement cooling with designated semiconductor chips or otherelements requiring cooling. For example, a single base may be compatiblewith multiple, interchangeable jet plates, where the different jetplates may be configured to match hotspots of correspondingsemiconductor power modules.

In specific examples, the described jet impingement cooling assembly maybe used for cooling in the context of automobile or other engineapplications. Such applications often have high power requirementswithin high-heat environments, while also meeting safety mandates.

FIG. 1 is an example exploded view of a jet impingement cooling assemblyfor high power semiconductor devices. In FIG. 1 , a heat exchange base102 includes an inlet connection 104 and an outlet connection 106, whichmay be in fluid contact with a fluid pump (not illustrated in FIG. 1 ).Thus, a fluid flow, such as a water flow, may be maintained through theinlet connection 104, through one or more cavities within the heatexchange base 102 as described below, and out of the outlet connection106. In FIG. 1 , the heat exchange base 102 is illustrated as having ashape of a rectangular prism, but example embodiments may utilize anysuitable shape, such as, e.g., a cube or oblong-shaped housing.

A jet plate 108 may be positioned within the heat exchange base 102. Forexample, the heat exchange base 102 may include a chamber divider 109that divides an interior of the heat exchange base 102 into an inletchamber (not visible in FIG. 1 , but shown, e.g., as inlet chamber 202in FIG. 2 ) and outlet chamber 134, as described below.

For example, the jet plate 108 may be mountable within, and removablefrom, the heat exchange base 102. Accordingly, multiple jet plates 108,having various desired configurations, may be interchanged with respectto a single heat exchange base 102. In some example, the jet plate 108may be separate from, and mounted to, the chamber divider 109. In otherimplementations, the jet plate 108 may be integral with the chamberdivider 109, and may be inserted and/or removed in conjunctiontherewith.

The jet plate 108 may include a raised jet pedestal 110 that includes ajet vent or nozzle 112 as shown in the cross-section view in FIG. 2 .The jet plate 108 also includes a jet pedestal 114 that includes a jetnozzle 116. Put another way, the jet pedestals 110, 114 each have araised surface in which corresponding jet nozzles 112, 116 are formed.Although the example of FIG. 1 illustrates the jet plate 108 with thetwo jet pedestals 110, 114, other example implementations of the jetplate 108 may include a single jet pedestal, or may include three ormore jet pedestals.

The jet nozzle 112 provides a vent, gap, or opening through whichpressurized fluid flowing through the inlet connection 104 is forced,shown as high-speed fluid flow 118. Similarly, the jet nozzle 116 alsoprovides a vent, gap, or opening through which pressurized fluid flowingthrough the inlet connection 104 is forced, shown as high-speed fluidflow 120. Thus, the jet plate 108 forms a sealed connection with thechamber divider 109 and with the heat exchange base 102, so that anyfluid received by way of the inlet connection 104 is forced through thejet nozzles 112, 116.

A semiconductor power module 122 may include a circuit board or otherassembly of a plurality of semiconductor chips, or other devices,illustrated in FIG. 1 generically as devices 124, 126, 128, and 130. Asreferenced above, some of the semiconductor power module devices 124-130may have high heat signatures, while others may require little or nocooling. For the sake of the example of FIG. 1 , devices 124 and 126 areassumed to have high heat signatures and form relative hotspots, whiledevices 128, 130 are assumed to have low heat signatures, and requirelittle cooling.

Then, as referenced above, and illustrated in FIG. 1 , the heat exchangebase 102 is configured to receive the semiconductor power module 122, sothat the jet nozzles 112, 116 may be positioned to be directly below thedevices 124, 126, respectively, when the semiconductor power module 122is attached to the heat exchange base 102. Consequently, fluid flow fromthe inlet connection 104 may be forced through the jet nozzles 112, 116,and may then impinge directly onto corresponding backside of the devices124, 126. Such an approach provides highly-efficient and direct coolingof the devices 124, 126.

Following this jet impingement onto the devices 124, 126, the fluid flowmay proceed through relatively wide fluid-return channels definedbetween the jet pedestals 110, 114, or between one of the jet pedestals110, 114 and at least one wall of the heat exchange base 102. Forexample, in FIG. 1 , a relatively low-speed fluid flow 131 isillustrated as occurring within a wide gap or channel 132 definedbetween the jet pedestals 110, 114. The return fluid flow may also beconstrained by the presence of the semiconductor power module 122, asattached to the heat exchange base 102.

As illustrated in FIG. 1 , the return fluid flow may proceed through theoutlet chamber 134 and then through the outlet connection 106, tothereby return to the fluid pump being used. In some implementations,the presence of the return fluid flow through the outlet chamber 134 mayprovide additional cooling to the devices 128, 130 of the semiconductorpower module 122. That is, in the example of FIG. 1 , it may be assumedthat the devices 128, 130 require significantly less cooling than thedevices 124, 126, so that associated cooling demands may be met withoutrequiring the type of jet impingement described with respect to thedevices 124, 126.

FIG. 2 is a cross-section view of the jet impingement cooling assemblyof FIG. 1 . In FIG. 2 , the inlet chamber 202 is visible, and thedescribed fluid flow is illustrated in more detail.

In particular, inlet fluid flow 204 is illustrated as translating intopressurized flows 206, 208, which are vented through jet nozzles 112,116, respectively. Return fluid flow is shown in FIG. 2 as relativelylow-speed flow 210 proceeding between the jet pedestal 110 and a wall ofthe heat exchange base 102, as well as relatively low-speed flow 212proceeding between the jet pedestals 110, 114.

FIG. 3 is a further view of the heat exchanger housing of FIG. 1 . Inthe implementation of FIG. 3 , a chamber divider 302, corresponding toan implementation of the chamber divider 109 of FIG. 1 , is illustrated.That is, as referenced above, the chamber divider 109 of FIG. 1 mayrepresent a divider integrated with the jet plate 108, or a separatedivider attached to the heat exchange base 102. FIG. 3 illustrates thelatter scenario, in which the chamber divider 302 is integral with, orattached to, walls of the heat exchange base 102, and divides aninterior of the heat exchange base 102 into an inlet chamber 304 and anoutlet chamber 306.

FIG. 4A illustrates an example jet plate 402 that may be used inconjunction with the example implementations of FIGS. 1-3 . Inparticular, the jet plate 402 is illustrated as being separate from thechamber divider 302 of FIG. 3 , and suitable for mounting above theinlet chamber 304.

In FIG. 4A, a jet pedestal 404 is illustrated as having a jet nozzle406, while a jet pedestal 408 is illustrated as having a jet nozzle 410.In the example of FIG. 4 , the jet pedestals 404, 408 are illustrated astrapezoidal prisms, while the jet nozzles 406, 410 are illustrated asrectangular, but other configurations may be used, as well, such ascircular, or ellipsoidal. In general, jet pedestals may define volumeswhich decrease along a direction of fluid flow therethrough duringcooling operations, so as to direct and concentrate high-pressure fluidflow through the jet nozzles 406, 410. In some implementations, however,the jet pedestals may have walls that are entirely perpendicular to asurface of the jet plate 402. Further, the jet nozzles 406, 410 may beformed as shapes other than rectangles, such as squares, circles, orovals.

As illustrated in both FIG. 1 and FIG. 4A, a width and length of thevarious jet pedestals may be generally matched to corresponding devicesto be cooled (such as the devices 124, 126 of FIG. 1 ). A height of eachjet pedestal is also configurable, within a range suitable formaintaining high-speed, high-pressure jet impingement onto a devicebeing cooled.

Put another way, a jet pedestal height defines a relatively narrow gapor space between a corresponding jet nozzle and a device being cooled.By matching planar or surface dimensions of a jet pedestal with itscorresponding device being cooled, cooling fluid may be maintained infurther contact with the device being cooled following the jetimpingement and prior to returning to an outlet chamber (e.g., 134 ofFIG. 1 , or 304 of FIG. 3 ).). The profile on the jet pedestal topsurface may be parallel to the backside surface of the semiconductormodule shown in FIG. 1 , or may have a sloped surface, to produce eitheraccelerating or decelerating flow.

In FIG. 4B, a jet plate 424 is similar to the jet plate 402 of FIG. 4A,but an opening 412 is illustrate as receiving an interchangeable jetpedestal 414 and included jet nozzle 416. Similarly, an opening 418 mayreceive an interchangeable jet pedestal 420 and included net nozzle 418.For example, embodiments similar to that of FIG. 4B may be used in anyscenarios in which a location of a jet nozzle center does not changefrom one application to another, but a desired coverage area increasesor decreases. Thus, in general, a jet pedestal may be removable from ajet plate and interchangeable with a second jet pedestal having a secondjet nozzle of a different size than the first jet nozzle.

In FIGS. 1-3 , inlet connection 104 and outlet connection 106 areillustrated as being located in the same side or wall of the heatexchange base 102, 302. In other example implementations, however, suchas illustrated with respect to FIGS. 5-7 , the connections may belocated on different base walls.

For example, in FIG. 5 , a heat exchange base 502 has an inletconnection 504 constructed through a wall 505, and an outlet connection506 at a right angle to the inlet connection 504, and constructedthrough a wall 507 that is at a right angle to the wall 505.

Then, a chamber divider 508 defines an inlet chamber 510 and an outletchamber 512. As a result, the embodiment of FIG. 5 may be utilized inconjunction with jet plates having different constructions than thoseshown above.

For example, FIG. 6 illustrates an L-shaped jet plate 602 that isconfigured for mounting above, and for covering and sealing, the inletchamber 510 of FIG. 5 . As shown, the L-shaped jet plate 602 includes ajet pedestal 604 having a jet nozzle 606 that defines a jet impingementfluid flow 608. Further, the L-shaped jet plate 602 includes a jetpedestal 610 having a jet nozzle 612 that defines a jet impingementfluid flow 614. Still further, the L-shaped jet plate 602 includes a jetpedestal 616 having a jet nozzle 618 that defines a jet impingementfluid flow 620. Then, relatively low-speed, low-pressure flows 622 mayoccur between the jet pedestals 604, 610, and 616, and between the jetpedestal 604 and the wall 505, and between the jet pedestal 616 and thewall 507.

FIG. 7 is a cut-away view of the example jet impingement coolingassembly of FIG. 5 , with the example jet plate of FIG. 6 installedtherein. Although not illustrated in FIG. 7 , it will be appreciatedthat the example of FIG. 7 may be designed for use with a semiconductorpower module in which individual semiconductor chips or devices areshaped and arranged in an L-shaped configuration, and generally sizedand spaced to align the centers of each such device with centers of thevarious jet nozzles 606, 612, 618. As in FIG. 1 , such a semiconductorpower module may also include an additional low-power device(s) that maybe configured to align with the outlet chamber 512.

FIG. 8 illustrates another example jet plate 802. In the example of FIG.8 , the jet plate 802 includes three jet pedestals 804, 806, 808,arranged linearly. As designated specifically with respect to jetpedestal 804, but common to jet pedestals 806, 808, as well, the jetpedestal 804 includes dual jet nozzles 810, 812.

FIG. 9A illustrates another example embodiment of the jet impingementcooling assembly of FIG. 1 , using the example jet plate of FIG. 8 . Asshown, a heat exchange base 902 has an inlet connection 904 and anoutlet connection 906. The interchangeable jet plate 802 is mountedwithin the heat exchange base 902. An inlet chamber beneath the jetplate 802 and in fluid connection with the inlet connection 904 is notvisible in FIG. 9 , while an outlet chamber 908 is shown in fluidconnection with the outlet connection 906.

In FIG. 9A, an attachment plate 910 is illustrated as being configuredfor attachment to the heat exchange base 902. FIG. 9A illustrates screwattachments 912, 914, but any suitable attachment means may be used.

The attachment plate 910 is illustrated as having module-mountingopenings 916, which are sized and/or configured to receive (e.g., becoupled to or adjacent to) semiconductor power module(s) 918. Asillustrated in FIG. 9 , and described herein, the jet pedestals 804,806, 808 and included jet nozzles (e.g., 810, 812) may be selected andconfigured to correspond to individual device elements 920, 922 of thepower module 918.

FIG. 9B is another example view of the example of FIG. 9A. FIG. 9B is atop view illustrating that the module-mounting openings 916 may beopened or closed on an as-needed basis, depending on a number ofsemiconductor power modules 918 to be added.

FIG. 9C is an example cross-section view of the example of FIGS. 9A and9B. As illustrated, FIG. 9C shows fluid flow 924 through the inletconnection 904 and the various jet pedestals 804, 806, 808, and thenthrough the jet nozzles 810, 812.

FIG. 10 is a flowchart illustrating an example manufacturing process formaking a jet impingement cooling assembly, in accordance with exampleembodiments described herein. In the simplified, non-limiting example ofFIG. 10 , the operations 1002-1010 are illustrates as separate,sequential operations. However, in some example implementations,additional or alternative operations or sub-operations may be included,or two or more operations may be implemented together as a singleoperation.

In the example of FIG. 10 , a heat exchange base having an inlet chamberand an outlet chamber may be formed (1002). An inlet connection in fluidconnection with the inlet chamber may be formed (1004), and an outletconnection in fluid connection with the outlet chamber may be formed(1006).

A jet plate configured to be coupled to the inlet chamber may be formed(1008). A jet pedestal may be formed on the jet plate and having araised surface with a jet nozzle formed therein (1010).

In various examples, as described herein, the jet pedestal may bepositioned on the jet plate to cause jet impingement of fluid flow fromthe inlet chamber through the jet nozzle and onto the backside of thesemiconductor device. A fluid flow path may be defined from the inletconnection to the inlet chamber, through the jet nozzle, onto thebackside of the semiconductor device, through at least one returnchannel defined by pedestal walls of the jet pedestal and thereby to theoutlet chamber, and from the outlet chamber through the outletconnection.

The return channel may be defined between the pedestal walls and atleast one wall of the heat exchange base. The jet plate may include asecond jet pedestal with a second jet nozzle, and the return channel maybe defined between the pedestal and the second pedestal.

The jet pedestal may have a first configuration on the jet plate, andthe jet plate may be interchangeable within the heat exchange base witha second jet plate with at least a second pedestal having a secondconfiguration.

Jet plates can have any suitable number of jet pedestals arranged andoriented in any suitable manner relative to one another. Any jetpedestal may have one, two, or more jet nozzles. Different jet pedestalson the same jet plate may have a different number, shape, size, orconfiguration of jet nozzles. Multiple jet plates may be sized to fit asingle heat exchange base, so that it is possible to interchange jetplates to perform jet impingement cooling on a corresponding pluralityof semiconductor power modules that are also compatible with the sameheat exchange base.

FIG. 11 illustrates a graph demonstrating improved cooling provided bythe various embodiments described herein, as compared to conventionaltechniques. As shown, maximum temperature ranges for each of a pluralityof potential hotspots of semiconductor power modules (e.g., heat sinkbase, heat sink solder, DBC, Ceramic, DBC top, Solder, or IGBT(Insulated gate bipolar transistor)) are significantly lower for the jetimpingement techniques described herein as compared to scenarios with nocooling enhancements, or to other, conventional techniques (e.g., DBCfins, pin fins, plate fins, honeycomb 3-stack, or honeycomb 5-stack).

It will be understood that, in the foregoing description, when anelement, such as a layer, a region, a substrate, or component isreferred to as being on, connected to, electrically connected to,coupled to, or electrically coupled to another element, it may bedirectly on, connected or coupled to the other element, or one or moreintervening elements may be present. In contrast, when an element isreferred to as being directly on, directly connected to or directlycoupled to another element or layer, there are no intervening elementsor layers present. Although the terms directly on, directly connectedto, or directly coupled to may not be used throughout the detaileddescription, elements that are shown as being directly on, directlyconnected or directly coupled can be referred to as such. The claims ofthe application, if any, may be amended to recite exemplaryrelationships described in the specification or shown in the figures.

As used in the specification and claims, a singular form may, unlessdefinitely indicating a particular case in terms of the context, includea plural form. Spatially relative terms (e.g., over, above, upper,under, beneath, below, lower, and so forth) are intended to encompassdifferent orientations of the device in use or operation in addition tothe orientation depicted in the figures. In some implementations, therelative terms above and below can, respectively, include verticallyabove and vertically below. In some implementations, the term adjacentcan include laterally adjacent to or horizontally adjacent to.

Some implementations may be implemented using various semiconductorprocessing and/or packaging techniques. Some implementations may beimplemented using various types of semiconductor processing techniquesassociated with semiconductor substrates including, but not limited to,for example, Silicon (Si), Gallium Arsenide (GaAs), Gallium Nitride(GaN), Silicon Carbide (SiC) and/or so forth.

While certain features of the described implementations have beenillustrated as described herein, many modifications, substitutions,changes and equivalents will now occur to those skilled in the art. Itis, therefore, to be understood that the appended claims are intended tocover all such modifications and changes as fall within the scope of theimplementations. It should be understood that they have been presentedby way of example only, not limitation, and various changes in form anddetails may be made. Any portion of the apparatus and/or methodsdescribed herein may be combined in any combination, except mutuallyexclusive combinations. The implementations described herein can includevarious combinations and/or sub-combinations of the functions,components and/or features of the different implementations described.

What is claimed is:
 1. A jet impingement cooling assembly forsemiconductor devices, comprising: a heat exchange base having an inletchamber and an outlet chamber; an inlet connection in fluid connectionwith the inlet chamber; an outlet connection in fluid connection withthe outlet chamber; a jet plate coupled to the inlet chamber; and a jetpedestal formed on the jet plate and having a raised surface with a jetnozzle formed therein, wherein the jet pedestal has a firstconfiguration on the jet plate, and further wherein the jet plate isinterchangeable within the heat exchange base with a second jet platewith at least a second jet pedestal having a second configuration. 2.The jet impingement cooling assembly for semiconductor devices of claim1, wherein the heat exchange base is configured to receive asemiconductor module including at least one semiconductor device with afrontside facing away from the inlet chamber and a backside facing thejet plate.
 3. The jet impingement cooling assembly for semiconductordevices of claim 2, wherein the jet pedestal is positioned on the jetplate to cause jet impingement of fluid flow from the inlet chamberthrough the jet nozzle and onto the backside of the semiconductordevice.
 4. The jet impingement cooling assembly for semiconductordevices of claim 3, wherein a fluid flow path is defined from the inletconnection to the inlet chamber, through the jet nozzle, onto thebackside of the semiconductor device, through at least one returnchannel defined by pedestal walls of the jet pedestal and thereby to theoutlet chamber, and from the outlet chamber through the outletconnection.
 5. The jet impingement cooling assembly for semiconductordevices of claim 4, wherein the return channel is defined between thepedestal walls and at least one wall of the heat exchange base.
 6. Thejet impingement cooling assembly for semiconductor devices of claim 4,wherein the jet plate has at least two jet pedestals, and furtherwherein the return channel is defined between the at least two jetpedestals.
 7. The jet impingement cooling assembly for semiconductordevices of claim 1, wherein the inlet connection and the outletconnection are positioned on a single side of the heat exchange base. 8.The jet impingement cooling assembly for semiconductor devices of claim1, wherein the inlet connection is positioned on a first side of theheat exchange base and the outlet connection is positioned on a secondside of the heat exchange base.
 9. The jet impingement cooling assemblyfor semiconductor devices of claim 1, further comprising a chamberdivider within the heat exchange base and defining the inlet chamber ona first side thereof, and the outlet chamber on a second side thereof,the chamber divider being coupled to the heat exchange base andconfigured to receive the jet plate.
 10. The jet impingement coolingassembly for semiconductor devices of claim 1, further comprising achamber divider within the heat exchange base and defining the inletchamber on a first side thereof, and the outlet chamber on a second sidethereof, the chamber divider being coupled to the jet plate andconfigured to be received within the heat exchange base together withthe jet plate.
 11. The jet impingement cooling assembly forsemiconductor devices of claim 1, wherein the second configurationincludes a second jet nozzle of a different size than the first jetnozzle.
 12. A jet plate assembly for jet impingement cooling of asemiconductor device, comprising: a jet plate configured to be receivedwithin a heat exchange base; and a jet pedestal formed on the jet plateand having at least one jet nozzle formed within a raised surface thatis raised from the jet plate surface by at least one jet pedestal wallconnecting the jet plate to the raised surface, wherein the jet plate,when received within the heat exchange base, defines a fluid flow pathfrom an inlet chamber of the heat exchange base through the jet nozzle,and through a return path defined by the at least one jet pedestal wallto an outlet chamber of the heat exchange base, wherein the jet pedestalhas a first configuration on the jet plate, and further wherein the jetplate is interchangeable within the heat exchange base with a second jetplate with at least a second pedestal having a second configuration. 13.The jet plate assembly for jet impingement cooling of a semiconductordevice of claim 12, wherein the jet plate is configured to be coupled toat least one wall of the heat exchange base, and to a chamber divider ofthe heat exchange base that separates the inlet chamber and the outletchamber.
 14. The jet plate assembly for jet impingement cooling of asemiconductor device of claim 12, wherein the jet pedestal is positionedon the jet plate to cause jet impingement of fluid flow from the inletchamber through the jet nozzle and onto a backside of a semiconductordevice mounted on a semiconductor module that is coupled to the heatexchange base, as part of the fluid flow path.
 15. The jet plateassembly for jet impingement cooling of a semiconductor device of claim12, wherein the jet plate includes at least two jet pedestals.
 16. Amethod of making a jet impingement cooling assembly for semiconductordevices, comprising: forming a heat exchange base having an inletchamber and an outlet chamber, including forming the inlet chamber witha mounting surface configured to be coupled to any of at least twointerchangeable jet plates, including at least a first jet plate and asecond jet plate; forming an inlet connection in fluid connection withthe inlet chamber; and forming an outlet connection in fluid connectionwith the outlet chamber, wherein the first jet plate includes a firstjet pedestal having a first configuration on the first jet plate, andthe second jet plate includes a second pedestal having a secondconfiguration on the second jet plate.
 17. The method of claim 16,further comprising: forming the jet pedestal as a trapezoidal prism. 18.The method of claim 16, further comprising: forming a chamber dividerwithin the heat exchange base that separates the inlet chamber from theoutlet chamber, and that is configured to receive the jet plate.